Embedded Storage 3ME3 Series: High IOPS with DRAM-less Design


Embedded storage series 3ME3, is the perfectly upgrade from the industrial 3ME series. The 3ME3 offers an outstanding 25,000 IOPS 4K random read and write all without an external DRAM buffer. The DRAM-less design not only prevents data loss from sudden power failure, but also makes for an even more compact form factor SSD, saving you precious space in your embedded system.

The 3ME3 series is designed with an innovative flash algorithm and uses the latest synchronous NAND Flash IC to enhance disk performance in both sequential and random data transfers.


• DRAM-less, 100% data integrity even in the event of power failure
• High random IOPS to enhance boot up times and general IO performance
• Enhanced performance with innovative firmware algorithm
• Supports TRIM, NCQ, and SMART
• Supports data integrity in the event of abnormal power failure with iData Guard technology
• Wide operating temperature range from -40°C to 85°C

For more information about Embedded Flash Storage please contact the following:
Singapore: http://www.anewtech.net, email:contactus@anewtch.com.sg
Malaysia: http://www.anewtech.com.my, email:sales@anewtech.com.my
Vietnam: http://www.anewtech.com.vn, email: sales@anewtech.com.vn

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